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PE4953S - P-Channel Enhancement Mode Power MOSFET

General Description

The PE4953S uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = -30V, ID = -5.3A RDS(ON) < 50mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PE4953S
Manufacturer ChipSourceTek
File Size 675.64 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE4953S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET Description The PE4953S uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE4953S General Features ● VDS = -30V, ID = -5.3A RDS(ON) < 50mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch k ● Power management Marking and pin assignment urceTe SOP-8 So Absolute Maximum Ratings (TA=25℃ unless otherwise noted) ipParameter Drain-Source Voltage h Gate-Source Voltage C Drain Current-Continuous Symbol VDS VGS ID Rating -30 ±20 -5.