PE58200P - N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the PE58200P, a member of the PE58200P-ChipSourceTek N-Channel Enhancement Mode Power MOSFET family.

Datasheet Summary

Description

The PE58200P uses deep trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 85V, ID = 200A RDS(ON) < 3.2mΩ @ VGS=10V Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

ChipSourceTek

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Datasheet Details

Part number	PE58200P
Manufacturer	ChipSourceTek
File Size	1.55 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE58200P Datasheet
Additional preview pages of the PE58200P datasheet.

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Full PDF Text Transcription

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PE58200P N-Channel Enhancement Mode Power MOSFET Description The PE58200P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 85V, ID = 200A RDS(ON) < 3.

Published: Feb 18, 2025 |