PE58200PA - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PE58200PA uses deep trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 85V, ID = 200A RDS(ON) < 3.2mΩ @ VGS=10V Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

ChipSourceTek

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Datasheet Details

Part number	PE58200PA
Manufacturer	ChipSourceTek
File Size	1.72 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE58200PA Datasheet
Additional preview pages of the PE58200PA datasheet.

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PE58200PA N-Channel Enhancement Mode Power MOSFET Description The PE58200PA uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 85V, ID = 200A RDS(ON) < 3.

Published: Mar 3, 2025 |