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PE58200PA - N-Channel Enhancement Mode Power MOSFET

General Description

The PE58200PA uses deep trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 85V, ID = 200A RDS(ON) < 3.2mΩ @ VGS=10V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number PE58200PA
Manufacturer ChipSourceTek
File Size 1.72 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE58200PA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE58200PA N-Channel Enhancement Mode Power MOSFET Description The PE58200PA uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 85V, ID = 200A RDS(ON) < 3.