PE6986E Datasheet | ChipSourceTek

N-Channel Enhancement Mode Power MOSFET Description The PE6986E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features - VDS = 18V, ID = 6.5A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 16mΩ @ VGS=3.8V RDS(ON) < 20mΩ @ VGS=2.5V ESD Rating: 4000V HBM Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package 技 k Application - Battery Protections 科 e - Load switch Marking and pin assignment 矽源特 urce T SOT-23-6L o...