• Part: PE8124HM1
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: ChipSourceTek
  • Size: 755.82 KB
Download PE8124HM1 Datasheet PDF
ChipSourceTek
PE8124HM1
PE8124HM1 is N-Channel Enhancement Mode Power MOSFET manufactured by ChipSourceTek.
Description The PE8124HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features - VDS > 12V, ID = 24A RDS(ON) < 3.9mΩ @ VGS=4.5V RDS(ON) < 4.2mΩ @ VGS=3.8V RDS(ON) < 4.6mΩ @ VGS=3.0V RDS(ON) < 5.4mΩ @ VGS=2.5V Schematic diagram ESD Rating: 4000V HBM - High Power and current handing capability - Lead free product is acquired 技 - Surface Mount Package k Application 科 e - PWM applications - Load switch 特 T - Power management Marking 源 rce DFN3x3-8L 矽 ou Absolute Maximum Ratings (TA=25℃ unless otherwise noted) S Drain-Source Voltage ip Gate-Source Voltage Parameter Drain Current-Continuous Ch Pulsed Drain Current (Note 1) TA=25℃ TA=70℃ Symbol VDS VGS Rating 12 ±8 24 16 80 Unit Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Ambient (Note...