PE8124HM1
PE8124HM1 is N-Channel Enhancement Mode Power MOSFET manufactured by ChipSourceTek.
Description
The PE8124HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
General Features
- VDS > 12V, ID = 24A
RDS(ON) < 3.9mΩ @ VGS=4.5V RDS(ON) < 4.2mΩ @ VGS=3.8V RDS(ON) < 4.6mΩ @ VGS=3.0V RDS(ON) < 5.4mΩ @ VGS=2.5V
Schematic diagram
ESD Rating: 4000V HBM
- High Power and current handing capability
- Lead free product is acquired
技
- Surface Mount Package k Application 科 e
- PWM applications
- Load switch
特 T
- Power management
Marking
源 rce DFN3x3-8L
矽 ou Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
S Drain-Source Voltage ip Gate-Source Voltage
Parameter
Drain Current-Continuous
Ch Pulsed Drain Current (Note 1)
TA=25℃ TA=70℃
Symbol
VDS VGS
Rating
12 ±8 24 16 80
Unit
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient (Note...