PE8209HN Datasheet | ChipSourceTek

N-Channel Enhancement Mode Power MOSFET Description The PE8209HN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features - VDS = 18V, ID = 9A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 14mΩ @ VGS=3.1V RDS(ON) < 16mΩ @ VGS=2.5V Schematic diagram ESD Rating: 4000V HBM - High Power and current handing capability - Lead free product is acquired 技 - Surface Mount Package k Application 科 e - PWM applications - Load switch 特 T - Power management Marking 源 rceDFN2x3-6L 矽 ou...