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PE8209HN - N-Channel Enhancement Mode Power MOSFET

General Description

The PE8209HN uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Key Features

  • VDS = 18V, ID = 9A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 14mΩ @ VGS=3.1V RDS(ON) < 16mΩ @ VGS=2.5V Schematic diagram ESD Rating: 4000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package k.

📥 Download Datasheet

Datasheet Details

Part number PE8209HN
Manufacturer ChipSourceTek
File Size 684.12 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8209HN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The PE8209HN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. PE8209HN General Features ● VDS = 18V, ID = 9A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 14mΩ @ VGS=3.1V RDS(ON) < 16mΩ @ VGS=2.