PE8209HM1 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: ChipSourceTek

Overview: N-Channel Enhancement Mode Power MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	PE8209HM1
Manufacturer	ChipSourceTek
File Size	739.04 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE8209HM1 PE8209HM1-ChipSourceTek Datasheet (PDF)

The PE8209HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

VDS = 18V, ID = 10A RDS(ON) < 12mΩ @ VGS=4.5V RDS(ON) < 13mΩ @ VGS=3.8V RDS(ON) < 15.5mΩ @ VGS=3.1V RDS(ON) < 20mΩ @ VGS=2.5V Schematic diagram ESD Rating: 4000V HBM.
High Power and current handing capability.
Lead free product is acquired 技.
Surface Mount Package k.

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