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PE8209HM1 - N-Channel Enhancement Mode Power MOSFET

Download the PE8209HM1 datasheet PDF. This datasheet also covers the PE8209HM1-ChipSourceTek variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PE8209HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Key Features

  • VDS = 18V, ID = 10A RDS(ON) < 12mΩ @ VGS=4.5V RDS(ON) < 13mΩ @ VGS=3.8V RDS(ON) < 15.5mΩ @ VGS=3.1V RDS(ON) < 20mΩ @ VGS=2.5V Schematic diagram ESD Rating: 4000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package k.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE8209HM1-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE8209HM1
Manufacturer ChipSourceTek
File Size 739.04 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8209HM1 Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
PE8209HN N-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode Power MOSFET Description The PE8209HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. PE8209HM1 General Features ● VDS = 18V, ID = 10A RDS(ON) < 12mΩ @ VGS=4.5V RDS(ON) < 13mΩ @ VGS=3.8V RDS(ON) < 15.5mΩ @ VGS=3.1V RDS(ON) < 20mΩ @ VGS=2.