PE8209HM1 - N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the PE8209HM1, a member of the PE8209HM1-ChipSourceTek N-Channel Enhancement Mode Power MOSFET family.

Product Overview

ChipSourceTek

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Datasheet Details

Part number	PE8209HM1
Manufacturer	ChipSourceTek
File Size	739.04 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE8209HM1 Datasheet
Additional preview pages of the PE8209HM1 datasheet.

PE8209HM1 Product details

Description

The PE8209HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Features

VDS = 18V, ID = 10A RDS(ON) < 12mΩ @ VGS=4.5V RDS(ON) < 13mΩ @ VGS=3.8V RDS(ON) < 15.5mΩ @ VGS=3.1V RDS(ON) < 20mΩ @ VGS=2.5V Schematic diagram ESD Rating: 4000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package k.

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Published: Feb 18, 2025 |