PE8250K - N-Channel Enhancement Mode Power MOSFET

Description

The PE8250K uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 20V, ID = 50A RDS(ON) < 6mΩ @ VGS=4.5V RDS(ON) < 8mΩ @ VGS=2.5V Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

ChipSourceTek

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Datasheet Details

Part number	PE8250K
Manufacturer	ChipSourceTek
File Size	696.63 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE8250K Datasheet

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Full PDF Text Transcription

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PE8250K N-Channel Enhancement Mode Power MOSFET Description The PE8250K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 20V, ID = 50A RDS(ON) < 6mΩ @ VGS=4.5V RDS(ON) < 8mΩ @ VGS=2.

Published: Mar 4, 2025 |