ChipSourceTek PE8250K
The PE8250K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.| Part No. | PE8250K |
|---|---|
| Datasheet | PE8250K Download |
| Manufacturer |  ChipSourceTek |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDS = 20V, ID = 50A RDS(ON) < 6mΩ @ VGS=4.5V RDS(ON) < 8mΩ @ VGS=2.5V Schematic diagram● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application 技
● PWM applications k
● Load switch Marking and pin assignment 矽源特o科urceTe
ABSOLUTE MAXIMUM RATINGS
(TC=25℃ unless otherwise noted) S Parameter Drain-Source Voltage ip Gate-Source Voltage Drain Current-Continuous (TC=25℃) h Drain Current-Continuous (TC=100℃) C Pulsed Drain Current (Note 1) Symbol VDS VGS ID ID IDM TO-252-2L Rating 20 ±12 50 36 200 Unit V V A A A Maximum Power Dissipation PD 50 W Avalanche Current IAS 43 A Avalanche Energy (L=0.1mH) EAS 92 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Case (Note 2) RθJC 3 ℃/W TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB: E-mail: Tony.Wang@ChipSourceTek.com InFo@Chip...
