ChipSourceTek PE8250M
The PE8250M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.| Part No. | PE8250M |
|---|---|
| Datasheet | PE8250M Download |
| Manufacturer |  ChipSourceTek |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications. It is ESD protected. PE8250MGENERAL FEATURES
● VDS = 18V, ID = 50A Schematic diagram RDS(ON) < 4.2mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V RDS(ON) < 10mΩ @ VGS=1.8V ESD Rating: 4000V HBM● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package 技 k Application
● PWM applications 科 e
● Load switch
● Power management 特 T
● Battery Protection Marking and pin assignment 源 rcePDFN3.3x3.3-8L 矽 u
ABSOLUTE MAXIMUM RATINGS
(TC=25℃ unless otherwise noted) o Drain-Source Voltage Parameter S Gate-Source Voltage Drain Current-Continuous ip Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) h Maximum Power Dissipation C Avalanche Current Symbol VDS VGS ID ID IDM PD IAS Rating 18 ±12 50 40 200 36 40 Unit V V A A A W A Avalanche Energy (L=0.1mH) EAS 80 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 3.5 ℃/W TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB: E-mail: Tony.Wang@ChipSourceTek.com InFo@ChipSourceTek.com 2020 Oct.
