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PE8250M - N-Channel Enhancement Mode Power MOSFET

Description

The PE8250M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Features

  • VDS = 18V, ID = 50A Schematic diagram RDS(ON) < 4.2mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V RDS(ON) < 10mΩ @ VGS=1.8V ESD Rating: 4000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package k.

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Datasheet Details

Part number PE8250M
Manufacturer ChipSourceTek
File Size 772.37 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8250M Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The PE8250M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. PE8250M General Features ● VDS = 18V, ID = 50A Schematic diagram RDS(ON) < 4.2mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V RDS(ON) < 10mΩ @ VGS=1.8V ESD Rating: 4000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package k Application ● PWM applications e ● Load switch ● Power management T ● Battery Protection Marking and pin assignment rcePDFN3.3x3.
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