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PE8307HS - N-Channel Power

General Description

The PE8307HS uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 30V, ID = 7A RDS(ON) < 21mΩ @ VGS=10V RDS(ON) < 34mΩ @ VGS=4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PE8307HS
Manufacturer ChipSourceTek
File Size 755.11 KB
Description N-Channel Power
Datasheet download datasheet PE8307HS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE8307HS N-Channel Enhancement Mode Power MOSFET Description The PE8307HS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 30V, ID = 7A RDS(ON) < 21mΩ @ VGS=10V RDS(ON) < 34mΩ @ VGS=4.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch ● Power management Marking and pin assignment rceTek SOP-8 ou Absolute Maximum Ratings (TA=25℃ unless otherwise noted) S Parameter Drain-Source Voltage ip Gate-Source Voltage Drain Current-Continuous h Pulsed Drain Current (Note 1) C Maximum Power Dissipation Symbol VDS VGS ID IDM PD Rating 30 ±20 7 30 1.