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PED645K - N-Channel Enhancement Mode Power MOSFET

Description

The PED645K uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Features

  • VDS = 18V, ID = 10A RDS(ON) < 6.5mΩ @ VGS=4.5V RDS(ON) < 7mΩ @ VGS=3.8V RDS(ON) < 8.5mΩ @ VGS=2.5V Schematic diagram ESD Rating: 2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package k.

📥 Download Datasheet

Datasheet Details

Part number PED645K
Manufacturer ChipSourceTek
File Size 1.09 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED645K Datasheet

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Full PDF Text Transcription

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PED645K N-Channel Enhancement Mode Power MOSFET Description The PED645K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features ● VDS = 18V, ID = 10A RDS(ON) < 6.5mΩ @ VGS=4.5V RDS(ON) < 7mΩ @ VGS=3.8V RDS(ON) < 8.5mΩ @ VGS=2.
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