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PED645N - N-Channel Enhancement Mode Power MOSFET

Product Overview

semi one

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PED645N N-Channel Enhancement Mode Power MOSFET by semi one - Datasheet Preview — Datasheet preview – PED645N

Datasheet Details

Part number	PED645N
Manufacturer	semi one
File Size	444.11 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED645N Datasheet
Additional preview pages of the PED645N datasheet.

Product details

Description

The PED645N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID =12 A RDS(ON) = 6.0mΩ@ VGS=4.5V RDS(ON) = 6.5mΩ@ VGS=4.2V RDS(ON) = 7.5mΩ@ VGS=3.8V RDS(ON) = 8.2mΩ@ VGS=2.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram G2 S2 S2 G1 S1 S1 DFN2x3-6L bottom view.

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Published: Dec 3, 2018 |