Datasheet4U Logo Datasheet4U.com

ID2304D - High Side & Low Side Gate Driver

General Description

The ID2304D is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process.

The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V.

Key Features

  • Fully operational to +600 V.
  • 3.3 V and 5 V logic compatible.
  • dV/dt Immunity ±50 V/nsec.
  • Negative VS Swing to -7 V.
  • Gate drive supply range from 10 V to 18 V.
  • UVLO for high side & low side channels.
  • Output Source/Sink Current Capability 300 mA / 500 mA.
  • Matched propagation delay for both channels.
  • Internal dead time 120 ns typical.
  • Build-in bootstrap diode Package/Order Information 1 LIN VB 8 2 HIN ID2304D 3 VCC HO 7 VS 6 4 COM LO 5 Typica.

📥 Download Datasheet

Datasheet Details

Part number ID2304D
Manufacturer Chipown
File Size 424.90 KB
Description High Side & Low Side Gate Driver
Datasheet download datasheet ID2304D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ID2304D Chipown High Side & Low Side Gate Drive IC General description The ID2304D is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.