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PN7106B - High and Low Side Driver

This page provides the datasheet information for the PN7106B, a member of the PN7106A High and Low Side Driver family.

Datasheet Summary

Description

The PN7106A/B is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process.

Features

  • z Fully operational to +600 V z 3.3 V logic compatible z dV/dt Immunity ±50 V/ns z Floating channel designed for bootstrap operation z Gate drive supply range from 10 V to 20 V z UVLO for both channels z Output Source / Sink Current Capability 450mA / 950mA z Independent Logic Inputs to Accommodate All Topologies (Version A) z Cross Conduction Protection with 100 ns Internal Fixed Dead Time (Version B) z -5V negative Vs ability z Pin-to-Pin Compatible with Industry Standards z Matched propagatio.

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Datasheet preview – PN7106B

Datasheet Details

Part number PN7106B
Manufacturer Chipown
File Size 572.77 KB
Description High and Low Side Driver
Datasheet download datasheet PN7106B Datasheet
Additional preview pages of the PN7106B datasheet.

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Full PDF Text Transcription

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PN7106A/B General Description The PN7106A/B is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration (version B) or any other high-side + low-side configuration (version A) which operates up to 600V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.
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