Description
The PN7106A/B is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process.
Features
- z Fully operational to +600 V z 3.3 V logic compatible z dV/dt Immunity ±50 V/nsec z Floating channel designed for bootstrap operation z Gate drive supply range from 10 V to 20 V z UVLO for both channels z Output Source / Sink Current Capability 400mA /
800mA z Independent Logic Inputs to Accommodate All
Topologies (Version A) z Cross Conduction Protection with 180 ns Internal
Fixed Dead Time (Version B) z -5V negative Vs ability z Matched propagation delay for both channels.