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CPC5602C - N Channel FET

General Description

The CPC5602C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process.

The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Key Features

  • Low on resistance 10 ohms High input impedance Low input and output leakage Small package size SOT-223 PC Card (PCMCIA) Compatible PCB Space and Cost Savings.

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Datasheet Details

Part number CPC5602C
Manufacturer Clare Inc.
File Size 76.72 KB
Description N Channel FET
Datasheet download datasheet CPC5602C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CPC5602C N Channel Depletion Mode FET Features • • • • • • Low on resistance 10 ohms High input impedance Low input and output leakage Small package size SOT-223 PC Card (PCMCIA) Compatible PCB Space and Cost Savings Applications • Support Component for LITELINK TM Data Access Arrangement (DAA) • Normally-on switch • Telecom • Constant Current Source Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications.