CPC5602C - N-Channel FET

This page provides the datasheet information for the CPC5602C, a member of the CPC5602 N-Channel FET family.

Product Overview

IXYS

Datasheet Details

Part number	CPC5602C
Manufacturer	IXYS
File Size	110.69 KB
Description	N-Channel FET
Datasheet	CPC5602C Datasheet
Additional preview pages of the CPC5602C datasheet.

CPC5602C Product details

Description

The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third generation vertical DMOS process.

The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Features

350V Drain-to-Source Voltage.
Depletion Mode Device Offers Low RDS(on) at Cold Temperatures.
Low On-resistance: 8 (Typical) @ 25°C.
Low VGS(off) Voltage: -2.0V to -3.6V.
High Input Impedance.
Low Input and Output Leakage.
Small Package Size SOT-223.
PC Card (PCMCIA) Compatible.
PCB Space and Cost Savings.

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Other Datasheets by IXYS

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Published: Jan 13, 2021 |