CPC5602C Datasheet | IXYS

Features - 350V Drain-to-Source Voltage - Depletion Mode Device Offers Low RDS(on) at Cold Temperatures - Low On-resistance: 8 (Typical) @ 25°C - Low VGS(off) Voltage: -2.0V to -3.6V - High Input Impedance - Low Input and Output Leakage - Small Package Size SOT-223 - PC Card (PCMCIA) patible - PCB Space and Cost Savings Applications - Support ponent for LITELINK™ Data Access Arrangement (DAA) - Telemunications - Normally On Switches - Ignition Modules - Converters - Security - Power Supplies CPC5602 N-Channel Depletion Mode FET Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly in difficult application environments such as telemunications, security, and power supplies. One of the primary applications for the CPC5602 is as a linear regulator/hook switch for the LITELINK family of Data Access Arrangements (DAA) Devices CPC5620A, CPC5621A, and CPC5622A. The CPC5602 has a typical on-resistance of 8, a drain-to-source voltage of 350V, and is available in an SOT-223 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part # CPC5602CTR Description N-Channel Depletion Mode FET, SOT-223 Pkg. Tape and Reel (1000/Reel) Package Pinout 4 123 Pin Number 1 2 3 4 Name GATE DRAIN SOURCE DRAIN DS-CPC5602-R10 .ixysic. INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings @...