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CPC3703 - N-Channel Depletion-Mode Vertical DMOS FETs

General Description

The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process.

The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Key Features

  • Depletion mode device offers low RDS(ON) at cold temperatures.
  • Low on resistance 4 ohms max. at 25ºC.
  • High input impedance.
  • High breakdown voltage 250V.
  • Low VGS(off) voltage -1.6 to -3.9V.
  • Small package size SOT89.

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Datasheet Details

Part number CPC3703
Manufacturer Clare
File Size 93.58 KB
Description N-Channel Depletion-Mode Vertical DMOS FETs
Datasheet download datasheet CPC3703 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BVDSX/ BVDGX 250V RDS(ON) (max) 4Ω IDSS (min) 360mA Package SOT-89 Features • Depletion mode device offers low RDS(ON) at cold temperatures • Low on resistance 4 ohms max. at 25ºC • High input impedance • High breakdown voltage 250V • Low VGS(off) voltage -1.6 to -3.9V • Small package size SOT89 Applications • Ignition Modules • Normally-on Switches • Solid State Relays • Converters • Telecommunications • Power Supply Package Pinout G D S D (SOT89) CPC3703 N-Channel Depletion-Mode Vertical DMOS FETs Description The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.