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CPC3703 Datasheet PDF

Clare CPC3703

The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The CPC3703 is a highly reliable FET device that has been used extensively in Clare’s Solid State Relays for industrial and telecommunications applications.
Part No. CPC3703
Datasheet CPC3703 Download
Manufacturer
Clare
Description N-Channel Depletion-Mode Vertical DMOS FETs
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CPC3703 datasheet page 1 preview

FEATURES

● Depletion mode device offers low RDS(ON) at cold temperatures
● Low on resistance 4 ohms max. at 25ºC
● High input impedance
● High breakdown voltage 250V
● Low VGS(off) voltage -1.6 to -3.9V
● Small package size SOT89

APPLICATIONS

● Ignition Modules
● Normally-on Switches
● Solid State Relays
● Converters
● Telecommunications
● Power Supply Package Pinout G D S D (SOT89) CPC3703 N-Channel Depletion-Mode Vertical DMOS FETs

DESCRIPTION

Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3703 offers a low, 4Ω maximum, on-state resistance at 25ºC. The CPC3703 has a minimum breakdown voltage of 250V, and is available in an SOT89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Informa...
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