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CPC3703C - N-Channel Depletion-Mode Vertical DMOS FETs

General Description

The CPC3703C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process.

Third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Key Features

  • Depletion mode device offers low RDS(ON) at cold temperatures.
  • Low on resistance 4 ohms max. at 25oC.
  • High input impedance.
  • High breakdown voltage 250V.
  • Low VGS(off) voltage -1.6 to -3.9V.
  • Small package size SOT-89.

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Datasheet Details

Part number CPC3703C
Manufacturer Clare
File Size 147.81 KB
Description N-Channel Depletion-Mode Vertical DMOS FETs
Datasheet download datasheet CPC3703C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CPC3703C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 250V RDS(ON) (max) 4.0Ω IDSS (min) 300mA Package SOT-89 Features • Depletion mode device offers low RDS(ON) at cold temperatures • Low on resistance 4 ohms max. at 25oC • High input impedance • High breakdown voltage 250V • Low VGS(off) voltage -1.6 to -3.9V • Small package size SOT-89 Applications • Ignition modules • Normally-on switches • Solid state relays • Converters • Telecommunications • Power supply Description The CPC3703C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.