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CPC3703C Datasheet PDF

Clare CPC3703C

The CPC3703C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The CPC3703C is a highly reliable FET device that has been used extensively in Clare’s solid state relays for industrial and telecommunications applications. This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules.
Part No. CPC3703C
Datasheet CPC3703C Download
Manufacturer
Clare
Description N-Channel Depletion-Mode Vertical DMOS FETs
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CPC3703C datasheet page 1 preview

FEATURES

● Depletion mode device offers low RDS(ON) at cold temperatures
● Low on resistance 4 ohms max. at 25oC
● High input impedance
● High breakdown voltage 250V
● Low VGS(off) voltage -1.6 to -3.9V
● Small package size SOT-89

APPLICATIONS

● Ignition modules
● Normally-on switches
● Solid state relays
● Converters
● Telecommunications
● Power supply

DESCRIPTION

Third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device for high power applications with high input impedance. The CPC3703C offers a low 4 ohm maximum on-state resistance at 25oC. The CPC3703C has a minimum breakdown voltage of 250V and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Package Pinout G D S D (SOT-89) Ordering Information Part # CPC3703C CPC3703CTR

DESCRIPTION

SOT-89 (100/Tube) SOT-89 (2000/Reel) Switching W...
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