IXYS CPC3703C
The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The CPC3703 is a highly reliable device that has been used extensively in our Solid State Relays for industrial and telecommunications applications.| Part No. | CPC3703C |
|---|---|
| Datasheet | CPC3703C Download |
| Manufacturer |  IXYS |
| Description | 250V N-Channel Depletion-Mode FET |
| Buy | Stock & Price |
FEATURES
● High Breakdown Voltage: 250V● Low On-Resistance: 4 max. at 25ºC
● Low VGS(off) Voltage: -1.6 to -3.9V
● Depletion Mode Device Offers Low RDS(on) at Cold Temperatures
● High Input Impedance
● Small Package Size: SOT-89
APPLICATIONS
● Ignition Modules● Normally-On Switches
● Solid State Relays
● Converters
● Telecommunications
● Power Supply Package Pinout D G D S (SOT-89) CPC3703 250V N-Channel Depletion-Mode FET
DESCRIPTION
Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. This device excels in power applications that require low drain-source resistance, particularly in cold environments such as automotive ignition modules. The CPC3703 offers a low, 4 maximum, on-state resistance at 25ºC. The CPC3703 has a minimum breakdown voltage of 250V, and is available in an SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part # CPC3703CTRDESCRIPTION
N-Channel Depletion Mode FET, SOT-89 Pkg.
