CPC3703C Description
The CPC3703 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications.
CPC3703C Key Features
- High Breakdown Voltage: 250V
- Low On-Resistance: 4 max. at 25ºC
- Low VGS(off) Voltage: -1.6 to -3.9V
- Depletion Mode Device Offers Low RDS(on)
- High Input Impedance
- Small Package Size: SOT-89