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CPC5602C Datasheet PDF

Clare CPC5602C

The CPC5602C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications.
Part No. CPC5602C
Datasheet CPC5602C Download
Manufacturer
Clare
Description N Channel FET
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CPC5602C datasheet page 1 preview

FEATURES

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● Low on resistance 10 ohms High input impedance Low input and output leakage Small package size SOT-223 PC Card (PCMCIA) Compatible PCB Space and Cost Savings

APPLICATIONS

● Support Component for LITELINK TM Data Access Arrangement (DAA)
● Normally-on switch
● Telecom
● Constant Current Source

DESCRIPTION

One of the primary applications for the CPC5602C is as a linear regulator/ hook switch for the LITELINKTM Data Access Arrangements (DAA) Devices (CPC5610A, CPC5611A, CPC5604A). The CPC5602C has a typical on-resistance of 8Ω, a breakdown voltage exceeding 350V and is available in an SOT-223 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.

ABSOLUTE MAXIMUM RATINGS

Parameter VDSS Voltage Total Package Dissipation Operational Temperature Storage Temperature Soldering Temperature Min — — -40 -40 — Max 350 2.5 +85 +125 +220 Units V W O O O Ordering Information

DESCRIPTION

N-Channel Depletion Mode FET, S...
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