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CPC5603C - N-Channel FET

General Description

The CPC5603C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process.

The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Key Features

  • Low on resistance 8 ohms.
  • Breakdown voltage 415V minimum.
  • High input impedance.
  • Low input and output leakage.
  • Small package size SOT-223.
  • PC Card (PCMCIA) Compatible.
  • PCB Space and Cost Savings.

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Datasheet Details

Part number CPC5603C
Manufacturer Clare
File Size 267.38 KB
Description N-Channel FET
Datasheet download datasheet CPC5603C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CPC5603C N Channel Depletion Mode FET www.DataSheet4U.com Features • Low on resistance 8 ohms • Breakdown voltage 415V minimum • High input impedance • Low input and output leakage • Small package size SOT-223 • PC Card (PCMCIA) Compatible • PCB Space and Cost Savings Description The CPC5603C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications.