Clare CPC5603C
The CPC5603C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications.| Part No. | CPC5603C |
|---|---|
| Datasheet | CPC5603C Download |
| Manufacturer |  Clare |
| Description | N-Channel FET |
| Buy | Stock & Price |
FEATURES
● Low on resistance 8 ohms● Breakdown voltage 415V minimum
● High input impedance
● Low input and output leakage
● Small package size SOT-223
● PC Card (PCMCIA) Compatible
● PCB Space and Cost Savings
DESCRIPTION
One of the primary applications for the CPC5603C is as a linear regulator/ hook switch for the LITELINK™ family of Data Access Arrangements (DAA) Devices CPC5620A, CPC5621A, and CPC5622A. The CPC5603C has a typical on-resistance of 8Ω, a breakdown voltage exceeding 415V and is available in an SOT-223 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.APPLICATIONS
● Support Component for LITELINK™ Data Access Arrangement (DAA)● Telecom Ordering Information Part # CPC5603C CPC5603CTR
DESCRIPTION
N-Channel Depletion Mode FET, SOT-223 Package (80/tube) N-Channel Depletion Mode FET, SOT-223 Package Tape and Reel (1000/reel) Package Pinout D 4 2 3 D S PIN # NAME 1 GATE 2 DRAIN 3 SOURCE 4 DRAIN 1 G Pin # 1...
