CPC5603C
Description
The CPC5603C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.
Key Features
- Low on resistance 8 ohms
- Breakdown voltage 415V minimum
- High input impedance
- Low input and output leakage
- Small package size SOT-223
- PC Card (PCMCIA) compatible
- PCB Space and Cost Savings
