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CMN2328AM - N-Channel Enhancement Mode Field Effect Transistor

General Description

The CMN2328AM combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for boost converters and synchronous rectifiers for consumer,telecom, industrial power supplies and LED backlighting.

Key Features

  • RDS(ON).

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Datasheet Details

Part number CMN2328AM
Manufacturer Cmos
File Size 1.07 MB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CMN2328AM Datasheet

Full PDF Text Transcription for CMN2328AM (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CMN2328AM. For precise diagrams, and layout, please refer to the original PDF.

CMN2328AM N-Channel Enhancement Mode Field Effect Transistor General Description The CMN2328AM combines advanced trench MOSFET technology with a low resistance package to...

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nes advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer,telecom, industrial power supplies and LED backlighting. Features RDS(ON)<180mΩ @ VGS=10V RDS(ON)<230mΩ @ VGS=4.5V SOT-23-3L Package 6OJU NN       3  Product Summary BVDSS 100V RDSON 180mΩ ID 2.8A Applications DC-DC converters Load Switch System Switch SOT-23-3L Pin Configuration % D G S SOT-23-3L Type CMN2328AM ● ◀▲ ( ● ● 4 Package SOT-23-3L Marking 1096  1.