Full PDF Text Transcription for CMN2328TM (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CMN2328TM. For precise diagrams, and layout, please refer to the original PDF.
CMN2328TM N-Channel Enhancement Mode Field Effect Transistor General Description The CMN2328TM combines advanced trench MOSFET technology with a low resistance package to...
View more extracted text
nes advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer,telecom, industrial power supplies and LED backlighting. Features RDS(ON)<103mΩ @ VGS=10V RDS(ON)<108mΩ @ VGS=4.5V SOT-23-3L Package 6OJU NN 3 Product Summary BVDSS 100V RDSON 103mΩ ID 4.5A Applications DC-DC converters Load Switch System Switch SOT-23-3L Pin Configuration % D ° G S SOT-23-3L · ( ° ° 4 Type Package Marking CMN2328TM SOT-23-3L 2328 1.6 CA03R2 1 2
CMN2328TM Datasheet
