• Part: CDBF0245
  • Description: SMD Schottky Barrier Diode
  • Category: Diode
  • Manufacturer: Comchip Technology
  • Size: 154.73 KB
Download CDBF0245 Datasheet PDF
Comchip Technology
CDBF0245
CDBF0245 is SMD Schottky Barrier Diode manufactured by Comchip Technology.
Features (Lead-free Device) Designed for mounting on small surface. Extremely thin/leadless package. Low leakage current (IR =0.1u A typ. @V R =10V). Majority carrier conduction. 0.051(1.30) 0.043(1.10) 1005(2512) 0.102(2.60) 0.095(2.40) Mechanical data Case: 1005 (2512) Standard package , molded plastic. 0.020(0.50) Typ. 0.035(0.90) 0.027(0.70) Terminals: Gold plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any. Weight: 0.006 gram (approximately). 0.020(0.50) Typ. 0.012 (0.30) Typ. Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current , surge peak Power Dissipation Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit V RRM VR Io I FSM PD T STG Tj -40 -40 3000 250 +125 +125 50 45 200 V V m A m A m W C C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Parameter Forward voltage Reverse current Capacitance between terminals V R = 10 V f = 1MHz, and 10 VDC reverse voltage Conditions I F = 200 m A DC Symbol Min Typ Max Unit VF IR CT 9 0.55 1 V u A p F REV:A QW-A1034 Page 1 SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBF0245) Fig. 1 - Forward characteristics 1000 10m 1m CHIP SMD Diodes Specialist Fig. 2 - Reverse characteristics 125 C Forward current (m A ) Reverse current ( A...