CDBF001A Datasheet | Comchip Technology

Features Designed for mounting on small surface. Extremely thin/leadless package. Low drop-down voltage. Majority carrier conduction. Preliminary 1005(2512) 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) Mechanical data Case: 1005 (2512) Standard package , molded plastic. 0.020(0.50) Typ. 0.035(0.90) 0.027(0.70) Terminals: Gold plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. 0.012 (0.30) Typ. Mounting position: Any. 0.020(0.50) Typ. Weight: 0.006 gram (approximately). Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Repetitive peak reverse voltage Average forward current Forward current , surge peak Power Dissipation Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit V RRM, V R IO I FSM PD T STG Tj -40 -40 500 150 +125 +125 30 100 V m A m A m W C C Electrical Characteristics ( at TA = 25 C unless otherwise noted ) Parameter Forward voltage 1 Forward voltage 2 Forward voltage 3 Forward voltage 4 Forward voltage 5 Reverse current IF = 1 m A DC IF = 10 m A DC IF = 30 m A DC IF = 100 m A DC V R = 25 V Conditions IF = 0.1 m A DC Symbol Min Typ Max Unit VF VF VF VF VF IR CT 0.24 0.32 0.40 0.50 1.00 2 6 V V V V V u A Capacitance between terminals F=1MHz and 10 V DC reverse voltage REV:A QW-A1004 Page 1 SMD Schottky Barrier Diode CHIP SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBF001A) Fig. 1 - Forward characteristics 1000 1m Fig. 2 - Reverse characteristics...