CDBF0140R Datasheet | Comchip Technology

Features Low forward Voltage (Lead-free Device) 1005(2512) 0.102(2.60) 0.095(2.40) Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction. 0.051(1.30) 0.043(1.10) Mechanical data Case: 1005 (2512) Standard package , molded plastic. 0.020(0.50) Typ. 0.035(0.90) 0.027(0.70) Terminals: Gold plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any. Weight: 0.006 gram (approximately). 0.020(0.50) Typ. 0.012 (0.30) Typ. Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Peak reverse voltage Reverse voltage Average forward rectified current Forward current , surge peak Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit V RM VR Io I FSM T STG Tj -40 -40 45 40 100 1 +125 +125 V V m A A C C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Parameter Forward voltage Reverse current Capacitance between terminals I F = 10 m A V R = 10 V f = 1MHz, and 10 VDC reverse voltage Conditions Symbol Min Typ Max Unit VF IR CT 6 0.45 1 V u A p F REV:A QW-A1016 Page 1 SMD Schottky Barrier Diode CHIP SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBF0140R) Fig. 1 - Forward characteristics 1m Fig. 2 - Reverse characteristics 100u Forward current (m A...