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MMBT2369-G - GENERAL PURPOSE TRANSISTORS

Key Features

  • -Power dissipation P C =0.3W 0.056(1.40) 0.047(1.20) SOT-23 0.119(3.00) 0.110(2.80) 3 Marking: M1J Collector 3 0.044(1.10) 0.035(0.90) 1 0.083(2.10) 0.066(1.70) 2 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) 1 Base 0.020(0.50) 0.013(0.35) 0.006(0.15) max 0.007(0.20) min 2 Emitter O Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25 C unless otherwise noted) Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-continuous Power.

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Datasheet Details

Part number MMBT2369-G
Manufacturer Comchip Technology
File Size 77.50 KB
Description GENERAL PURPOSE TRANSISTORS
Datasheet download datasheet MMBT2369-G Datasheet

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www.DataSheet4U.com General Purpose Transistors COMCHIP SMD Diodes Specialist MMBT2369-G (NPN) RoHS Device Features -Power dissipation P C =0.3W 0.056(1.40) 0.047(1.20) SOT-23 0.119(3.00) 0.110(2.80) 3 Marking: M1J Collector 3 0.044(1.10) 0.035(0.90) 1 0.083(2.10) 0.066(1.70) 2 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) 1 Base 0.020(0.50) 0.013(0.35) 0.006(0.15) max 0.007(0.20) min 2 Emitter O Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25 C unless otherwise noted) Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-continuous Power dissipation Thermal resistance, junction to ambient air Junction and storage temperature range O Symbol V CBO V CEO V EBO IC PC RθJA T J , T STG Value 40 15 4.5 0.