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MMBT2369 / PN2369 — NPN Switching Transistor
MMBT2369 / PN2369 NPN Switching Transistor
• This device is designed for high speed saturated switching at collector currents of 10mA to 100mA.
• Sourced from process 21.
February 2008
MMBT2369
PN2369
C
E
B SOT-23 Mark: 1J
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings * Ta = 25×C unless otherwise noted
Symbol
Parameter
VCEO VCBO VEBO IC ICP TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
**Collector Current (Pulse)
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.
MMBT2369 Datasheet
