MMBT2369L Datasheet | onsemi

Features - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant- MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous THERMAL CHARACTERISTICS Symbol VCEO VCES VCBO VEBO Value 15 40 40 4.5 200 Unit Vdc Vdc Vdc Vdc m Adc Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Symbol PD Max 225 1.8 Unit m W m W/C Thermal Resistance, Junction- to- Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Rq JA PD C/W 300 m W 2.4 m W/C Thermal Resistance, Junction- to- Ambient Rq JA C/W Junction and Storage Temperature TJ, Tstg - 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits...