MMBT5401-G Description
General Purpose Transistor MMBT5401-G (PNP) RoHS Device.
MMBT5401-G Key Features
- Epitaxial planar die construction. -plementary NPN type available (MMBT5551-G). -Ideal for medium power amplification an
- continuous Collector dissipation Junction and storage temperature
- 160 -150
- 5 -0.6 0.3 -55 ~ +150