MMBT5401-G - General Purpose Transistor

Features

-Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. Diagram: Collector 3 1 Base Marking: 2L 2 Emitter 0.056(1.40) 0.047(1.20) 0.041(1.05) 0.035(0.90) SOT-23 0.119(3.00) 0.110(2.80) 3 12 0.079(2.00) 0.071(1.80) 0.006(0.15) 0.002(0.05) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.004(0.10) max 0.008(0.20) min Dimensions in inches and (millimeter) Maximum Ratings (at TA=25°C unless otherwise noted).

Comchip

Datasheet Details

Part number	MMBT5401-G
Manufacturer	Comchip
File Size	90.86 KB
Description	General Purpose Transistor
Datasheet	MMBT5401-G Datasheet
Additional preview pages of the MMBT5401-G datasheet.

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Full PDF Text Transcription

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General Purpose Transistor MMBT5401-G (PNP) RoHS Device Features -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. Diagram: Collector 3 1 Base Marking: 2L 2 Emitter 0.056(1.40) 0.047(1.20) 0.041(1.05) 0.035(0.90) SOT-23 0.119(3.00) 0.110(2.80) 3 12 0.079(2.00) 0.071(1.80) 0.006(0.15) 0.002(0.05) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.004(0.10) max 0.008(0.

Published: Jun 26, 2017 |