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• AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED
1N5194 1N5195 1N5196
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C 1.0 mA/°C From 150°C to 175°C Forward Current: 650 mA
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
TYPE VRM V RWM IO IO TA = 150°C mA 50 50 50 I FSM TP = 1/120 s TA = 25°C A 2 2 2
V (pk) 1N5194 1N5195 1N5196 80 180 250
V (pk) 70 180 225
mA 200 200 200
FIGURE 1
TYPE
VF @100mA
I R1 at V RWM TA = 25°C nA dc 25 25 25
I R2 at V RM TA = 25°C µA 100 100 100
I R3 at V RWM TA = 150°C µA dc 5 5 5
DESIGN DATA
CASE: Hermetically sealed glass case. DO – 35 outline.
1N5196 Datasheet
