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1N5196 - SWITCHING DIODE

Download the 1N5196 datasheet PDF. This datasheet also covers the 1N5194 variant, as both devices belong to the same switching diode family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (1N5194-Microsemi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
1N5196 GENERAL PURPOSE SILICON DIODES Compensated Deuices Incorporated
1N5196UR LL-35 High Voltage / Current Low Leakage Glass Diodes Microsemi Corporation
1N5196UR GENERAL PURPOSE SILICON DIODES Compensated Deuices Incorporated
1N5190 GLASS PASSIVATED SILICON RECTIFIER Central Semiconductor
1N5190 FAST RECOVERY RECTIFIERS SENSITRON SEMICONDUCTOR

Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
1N5190 FAST RECOVERY GLASS RECTIFIERS
1N5194 SWITCHING DIODE
1N5195 SWITCHING DIODE
1N5181 High Voltage Rectifier
1N5182 High Voltage Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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• AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C 1.0 mA/°C From 150°C to 175°C Forward Current: 650 mA ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE 1N5194 1N5195 1N5196 VRM V RWM V (pk) 80 180 250 V (pk) 70 180 225 I O I O I FSM TA = 150°C TP = 1/120 s TA = 25°C mA mA A 200 50 200 50 200 50 2 2 2 TYPE 1N5194 1N5195 1N5196 VF @100mA I R1 at V RWM I R2 at V RM I R3 at V RWM TA = 25°C TA = 25°C TA = 150°C V dc 0.8 - 1.0 0.8 - 1.0 0.8 - 1.