1N5196UR Description
-65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 1.2mA/°C from 25ºC to 150ºC 1.0mA/°C from 150ºC to 175ºC Forward Current:.
1N5196UR is GENERAL PURPOSE SILICON DIODES manufactured by Compensated Deuices Incorporated.
| Manufacturer | Part Number | Description |
|---|---|---|
Microsemi |
1N5196UR | LL-35 High Voltage / Current Low Leakage Glass Diodes |
Microsemi |
1N5196 | SWITCHING DIODE |
-65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 1.2mA/°C from 25ºC to 150ºC 1.0mA/°C from 150ºC to 175ºC Forward Current:.