1N5819UR Overview
-55°C to +125°C Storage Temperature: -55°C to +150°C Average Rectified Forward Current: 1.0 AMP @TEC = +55°C Derating:.
1N5819UR datasheet by Compensated Deuices Incorporated.
| Part number | 1N5819UR |
|---|---|
| Datasheet | 1N5819UR_CompensatedDeuicesIncorporated.pdf |
| File Size | 34.05 KB |
| Manufacturer | Compensated Deuices Incorporated |
| Description | 1 AMP SCHOTTKY BARRIER RECTIFIERS |
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-55°C to +125°C Storage Temperature: -55°C to +150°C Average Rectified Forward Current: 1.0 AMP @TEC = +55°C Derating:.
View 1N5819UR-1 datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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1N5819UR-1 | SCHOTTKY BARRIER DIODE | Sensitron |
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1N5819U | Aerospace 45V 1A Schottky diode | ST Microelectronics |
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1N5819 | Low drop power Schottky rectifier | STMicroelectronics |
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1N5819 | Schottky barrier diodes | NXP |
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1N5819 | SCHOTTKY BARRIER RECTIFIERS | MotorolaInc |
View all Compensated Deuices Incorporated datasheets
| Part Number | Description |
|---|---|
| 1N5820US | 3 AMP SCHOTTKY BARRIER RECTIFIERS |
| 1N5821US | 3 AMP SCHOTTKY BARRIER RECTIFIERS |
| 1N5822US | 3 AMP SCHOTTKY BARRIER RECTIFIERS |
| 1N5194 | GENERAL PURPOSE SILICON DIODES |
| 1N5194UR | GENERAL PURPOSE SILICON DIODES |
| 1N5195 | GENERAL PURPOSE SILICON DIODES |
| 1N5195UR | GENERAL PURPOSE SILICON DIODES |
| 1N5196 | GENERAL PURPOSE SILICON DIODES |
| 1N5196UR | GENERAL PURPOSE SILICON DIODES |
| 1N5283 | CURRENT REGULATOR DIODES |