2N3439 Datasheet PDF | Comset Semiconductor

Comset Semiconductor 2N3439

The 2N3439 and 2N3440 are high voltage silicon epitaxial transistors mounted in TO-39 metal package. They are intended for use in power amplifier, in consumer and industrial line-operated applications. These devices are particularity suited as drives in high voltage low current inverters, switching and series regulators.

Part No.	2N3439
Datasheet	2N3439 Download
Manufacturer	Comset Semiconductor
Description	Transistor
Buy	Stock & Price

ABSOLUTE MAXIMUM RATINGS

Value 2N3439 Symbol VCEO VCBO VEBO IC IB PD TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation IB = 0 IE = 0 IC = 0 2N3440 250 300 7 1 500 1 10 200 -65 to +200 Unit V V V A mA W °C 350 450 Tamb = 25° Tcase = 25° Junction Temperature Storage Temperature range THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient Thermal Resistance, Junction to case Value 175 35 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - NPN 2N3439 – 2N3440

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified Symbol ICBO ICEO ICEX IEBO VCEO hFE VCE(SAT) VBE(SAT) fT Cob Ratings Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-emitter Breakdown Voltage DC Current Gain Collector-Emitter saturation Voltage Base-Emitter saturation Voltage Transition frequency Output Capacitance Test Condition(s...

2N3439 Datasheets by Manufacturer

5 datasheets

Part Number	Manufacturer
2N3439	STMicroelectronics
2N3439	Seme LAB
2N3439	TT
2N3439	Microsemi
2N3439	NTE