Comset Semiconductors BD647
SILICON DARLINGTON POWER TRANSISTORS
| Part No. | BD647 |
|---|---|
| Datasheet | BD647 Download |
| Manufacturer |  Comset Semiconductors |
| Description | SILICON DARLINGTON POWER TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value 60 80 100 120 140 45 60 80 100 120 Unit VCBO Collector-Base Voltage V VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage 5 V IC Collector Current 8 A ICM Collector Peak Current 12 A 17/10/2012 COMSET SEMICONDUCTORS 1|5 Datasheet pdf - SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651ABSOLUTE MAXIMUM RATINGS
Symbol Ratings BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 300 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-MB RthJ-A Ratings From junction to mounting base From junction to ambient in free air Value 2 62.
