Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) High DC Current Gain : hFE= 750(Min) @IC= 3A Low Saturation Voltage Complement to Type BD648 Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| BD647 | Comset Semiconductors | SILICON DARLINGTON POWER TRANSISTORS |
| BD6423EFV | ROHM | Stepping Motor Drivers |
| BD643 | SavantIC | SILICON POWER TRANSISTOR |
| BD646 | SavantIC | SILICON POWER TRANSISTOR |
| BD64550EFV | ROHM | System Driver |
| BD646 | Comset Semiconductors | Power Transistor |
| BD648 | Comset Semiconductors | Power Transistor |
| BD6425 | ROHM | Stepping Motor Drivers |
| BD649 | Bourns | NPN SILICON POWER DARLINGTONS |
| BD646 | Bourns | PNP SILICON POWER DARLINGTONS |
