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BD911 - Silicon NPN Power Transistors

Download the BD911 datasheet PDF. This datasheet also covers the BD909 variant, as both devices belong to the same silicon npn power transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BD909_ComsetSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BD911
Manufacturer Comset Semiconductors
File Size 153.00 KB
Description Silicon NPN Power Transistors
Datasheet download datasheet BD911 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTORS BD909 – BD911 SILICON POWER TRANSISTORS The BD909 and DB911, are silicon epitaxial-base NPN power transistors in a TO-220 envelope. They are intended for use in power linear and switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IE IB Pt Tj Tstg Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Power Dissipation Junction Temperature Storage Temperature range IE = 0 IB = 0 IC = 0 Value BD909 80 80 BD911 100 100 Unit V V V A A A W °C www.DataSheet.net/ 5 15 15 5 90 150 -65 to 150 Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings From junction to mounting base Value 1.