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BD911 - NPN Transistor

General Description

DC Current Gain - : hFE = 40@ IC= 0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) Complement to Type BD912 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier a

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Complement to Type BD912 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.