BU911 Datasheet | Comset Semiconductors

    NPN BU911 HIGH VOLTAGE POWER DARLINGTON The BU911 are high voltage, silicon NPN transistors in monolithic Darlington mounted in Jedec TO-220 plastic package. They are designed for applications such as electronic ignition, DC and AD motor controls, solenoid drivers, etc. pliance to Ro HS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCES VEBO IC ICM IB PD TJ TStg Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current Peak Base Current Total Device Dissipation Junction Temperature Storage Temperature Range @ TC = 25° Vbe=0 .Data Sheet.net/ Ratings Value 400 450 5 6 10 1 60 150 -65 to +150 Unit V V V A A A W °C °C THERMAL CHARACTERISTICS Symbol Rth J-c Ratings Thermal Resistance, Junction to case Value Unit °C/W 21/11/2012 SET SEMICONDUCTORS 1|3 Datasheet pdf - http://..co.kr/     NPN BU911 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO ICES IEBO VCEO VF VCE(SAT) Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Sustaining Voltage Didode Forward Voltage Collector-Emitter Saturation Voltage (- ) Base-Emitter Saturation Voltage (- ) Test Condition(s) VCE = 400V, IB = 0 VCE = 400V, VBE = 0 VCE = 400V, VBE = 0 TC = 125°C VBE = 5 V, IC = 0 IC = 100 m A, IB = 0 IF =4 A IC =2.5 A, IB =50 m A IC =4 A, IB =200 m A .Data Sheet.net/ Min - Typ - Max 1...