Datasheet Details
| Part number | BU911 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.54 KB |
| Description | NPN Transistor |
| Datasheet | BU911-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BU911.
| Part number | BU911 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.54 KB |
| Description | NPN Transistor |
| Datasheet | BU911-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solenoid/ relay drivers ·Motor control ·Electronic automotive ignition ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 6 A ICM Collector Current-peak 10 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU911 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BU911 | MEDIUM VOLTAGE NPN IGNITION DARLINGTON | ST Microelectronics |
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BU911 | SILICON POWER TRANSISTOR | SavantIC |
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BU911 | HIGH VOLTAGE POWER DARLINGTON | Comset Semiconductors |
| Part Number | Description |
|---|---|
| BU902 | NPN Transistor |
| BU903 | NPN Transistor |
| BU908 | NPN Transistor |
| BU920 | NPN Transistor |
| BU920PFI | NPN Transistor |
| BU920T | NPN Transistor |
| BU921 | NPN Transistor |
| BU921P | NPN Transistor |
| BU921PFI | NPN Transistor |
| BU921T | NPN Transistor |