Comset Semiconductors TIC106N
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR
| Part No. | TIC106N |
|---|---|
| Datasheet | TIC106N Download |
| Manufacturer |  Comset Semiconductors |
| Description | P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Value A Symbol VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Ratings Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 80°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 80°C case temperature (see Note3) Surge on-state current (see Note4) Peak positive gate current (pulse width ≤300 µs) Peak power dissipation (pulse width ≤300 µs) Average gate power dissipation (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds B C D E M S N Unit V V A A A A W W °C °C °C 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S THERMAL CHARACTERISTICS Symbol tgt tq R∂JC R∂JA Gate-controlled Turn-on...
