Inchange Semiconductor TIC106N
Thyristors
| Part No. | TIC106N |
|---|---|
| Datasheet | TIC106N Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Thyristors |
| Buy | Stock & Price |
APPLICATIONS
●5A contimunous on-state current●30A surge-current
●Glass passivated
●Max IGT of 200μA
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) On-state current Tc=80℃ IT(RMS) RMS on-state current Tc=80℃ ITM Surge peak on-state current PGM Peak gate power PW≤300μs PG(AV) Average gate power Tj Operating Junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 800 800 3.2 5 30 1.3 0.3 110 -40 ~+125 1.9 62.5 UNIT V V A A A W W ℃ ℃ ℃/W ℃/WELECTRICAL CHARACTERISTICS
(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current VRM=VRRM, VRM=VRRM, Tj=110℃ VDM=VDRM, VDM=VDRM, Tj=110℃ 0.4 1.0 mA 0.4 1.0 mA VTM On-state...
