TIC108 - SILICON CONTROLLED RECTIFIERS

Comset Semiconductors

Datasheet Details

Part number	TIC108
Manufacturer	Comset Semiconductors
File Size	250.78 KB
Description	SILICON CONTROLLED RECTIFIERS
Datasheet	TIC108 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TIC108	SILICON CONTROLLED RECTIFIERS	Power Innovations Limited
TIC106	SILICON CONTROLLED RECTIFIERS	Power Innovations Limited
TIC106A	PNPN SILICON REVERSE-BLOCKING TRIODE THYRISTOR	Texas Instruments
TIC106B	PNPN SILICON REVERSE-BLOCKING TRIODE THYRISTOR	Texas Instruments
TIC106C	Thyristor	INCHANGE

Other Datasheets by Comset Semiconductors

Part Number	Description
TIC108A	SILICON CONTROLLED RECTIFIERS
TIC108B	SILICON CONTROLLED RECTIFIERS
TIC108C	SILICON CONTROLLED RECTIFIERS
TIC108D	SILICON CONTROLLED RECTIFIERS
TIC108E	SILICON CONTROLLED RECTIFIERS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SEMICONDUCTORS TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M, TIC108N, TIC108S SILICON CONTROLLED RECTIFIERS • • • • • • 5 A Continuous On-State Current 20 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 1 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value A VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Notes: 1. 2. 3. 4. 5. 21/06/2012 Page 1 of 3 These values apply when the gate-cathode resistance RGK = 1kΩ These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate linearly to zero at 110°C.