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SEMICONDUCTORS
TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S SILICON TRIACS
• • • • • • 6 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrants 1-3) Sensitive gate triacs Compliance to ROH
ABSOLUTE MAXIMUM RATINGS Value A
VDRM IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak on-state surge current half-sine-wave (see Note4) Peak gate current Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤200 µs) Average gate power dissipation at (or below) 85°C case (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.
TIC216N Datasheet
