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TIC216S - (TIC216x) SILICON TRIACS

Download the TIC216S datasheet PDF. This datasheet also covers the TIC216A variant, as both devices belong to the same (tic216x) silicon triacs family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (TIC216A_ComsetSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TIC216S
Manufacturer Comset Semiconductors
File Size 212.78 KB
Description (TIC216x) SILICON TRIACS
Datasheet download datasheet TIC216S Datasheet

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Other Datasheets by Comset Semiconductors

Part Number Description
TIC216A (TIC216x) SILICON TRIACS
TIC216B (TIC216x) SILICON TRIACS
TIC216D (TIC216x) SILICON TRIACS
TIC216M (TIC216x) SILICON TRIACS
TIC216N (TIC216x) SILICON TRIACS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S SILICON TRIACS • • • • • • 6 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrants 1-3) Sensitive gate triacs Compliance to ROH ABSOLUTE MAXIMUM RATINGS Value A VDRM IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak on-state surge current half-sine-wave (see Note4) Peak gate current Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤200 µs) Average gate power dissipation at (or below) 85°C case (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.