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VDS 1700 V
C2M0045170P
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C
72 A
RDS(on) 45 mΩ
N-Channel Enhancement Mode
Features
Package
• Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Halogen Free, RoHS Compliant
TAB Drain
Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • 1500V Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters • Pulsed Power Applications
1 234 D SSG
Drain
C2M0045170P Datasheet
