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VDS
900 V
C3M0120090D
ID @ 25˚C
23 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
120 mΩ
N-Channel Enhancement Mode
Features
Package
• C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant
Benefits
• Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency
Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Supplies • Lighting
Part Number C3M0120090D
Package TO-247-3
Marking C3M0120090
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
VDSmax VGSmax
C3M0120090D Datasheet
