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C3M0120090D - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • Package.
  • C3M SiC MOSFET technology.
  • High blocking voltage with low On-resistance.
  • High speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant Benefits.
  • Higher system efficiency.
  • Reduced cooling requirements.
  • Increased power density.
  • Increased system switching frequency.

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Datasheet Details

Part number C3M0120090D
Manufacturer Cree
File Size 961.77 KB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet C3M0120090D Datasheet
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VDS 900 V C3M0120090D ID @ 25˚C 23 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode Features Package • C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Supplies • Lighting Part Number C3M0120090D Package TO-247-3 Marking C3M0120090 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value VDSmax VGSmax
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