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C3M0120090J
VDS ID @ 25˚C
900 V 22 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
120 mΩ
N-Channel Enhancement Mode
Features • New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • New low impedance package with driver source • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Supplies • Lighting
Package
TAB Drain
1 2 34 5 6 7 G KS S S S S S
Drain (TAB)
Gate (Pin 1)
Dr
C3M0120090J Datasheet
