C3M0120090J Key Features
- New C3M SiC MOSFET technology
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- New low impedance package with driver source
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
- Wide creepage (~7mm) between drain and source Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
